PART |
Description |
Maker |
AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block 50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block 50з High Linearity Low Noise Internally Biased Wideband Gain Block From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
RT9818A-25PB |
N-Channel Open-Drain Output, Low Functional Supply Voltage 0.9V Internally Fixed Threshold 1.2V to 5V in 0.1V Step, High Accuracy ±1.5%
|
Richtek Technology Corp...
|
M54HC423 M54HC423A M54HC423AB1R M54HC423AC1R M54HC |
12-Bit DAC Parallel Voltage Out Pgrmable Int Ref Settling Time, Pwr Consumption, 8-bit uC Comp Int 20-TSSOP -40 to 85 双RETRIGGERABLE单稳态触发器 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
LR358C LR358 |
Internally Frequency Compensation, Large Voltage Gain
|
LRC[Leshan Radio Company]
|
RECE20279001E |
IPEX MHF (U.FL comp) receptacle
|
List of Unclassifed Manufacturers
|
NJX1675P |
Dual Comp Transistor 30V 6 A
|
ON Semiconductor
|
510109206 |
MODULE HDR 60 POSITION RT ANG COMP PIN
|
Virginia Panel Corporat...
|
2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device Toshiba Semiconductor
|
AT28BV256 AT28BV256-20 AT28BV256-25 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
STM32F301K8 |
ARM Cortex-M4 32-bit MCU FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 ?3.6 V
|
STMicroelectronics
|
2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications From old datasheet system 2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|